PART |
Description |
Maker |
MB82DBS02154E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
SPANSION[SPANSION]
|
MB82DP02183F-65LTBG MB82DP02183F-65L MB82DP02183F |
MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
HYE18L256160BFX-7.5 HYE18L256160BCX-7.5 HYB18L2561 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM 4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies AG
|
HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies AG
|
MB82D01181E MB82D01181E-60L MB82D01181E-60LPBN MB8 |
16 Mbit (1 M word 】 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
TC59LM914AMG TC59LM906AMG |
Network FCRAMTM
|
TOSHIBA
|